Product Description
Silicon type |
size |
Front electrode pattern |
Mono-crystalline |
182*182±0.5Φ247mm |
ten busbar |
interval :17.3mm |
Parameter items |
|
|
Specification |
Tolerance |
Unit |
Front surface |
A |
Finger quantity |
140 |
- |
- |
|
B |
Front busbar width |
1 |
±0.1 |
mm |
|
C |
Distance between busbars |
17.3 |
±0.15 |
mm |
Rare surface |
a |
Back busbar width |
1.6 |
±0.3 |
mm |
|
b |
Distance between back busbars |
17.3 |
±0.15 |
mm |
|
c |
Back finger quantity |
160 |
- |
- |
Eff (%) |
Efficiency(%) |
Pmpp(W) |
Impp(A) |
Umpp(V) |
Isc(A) |
Uoc(V) |
22.6 |
22.6-22.7 |
7.46 |
12.604 |
0.592 |
13.226 |
0.688 |
22.5 |
22.5-22.6 |
7.43 |
12.57 |
0.591 |
13.187 |
0.687 |
22.4 |
22.4-22.5 |
7.4 |
12.535 |
0.59 |
13.147 |
0.686 |
22.3 |
22.3-22.4 |
7.36 |
12.5 |
0.589 |
13.108 |
0.685 |
22.2 |
22.2-22.3 |
7.33 |
12.465 |
0.588 |
13.068 |
0.684 |
22.1 |
22.1-22.2 |
7.3 |
12.43 |
0.587 |
13.028 |
0.683 |
22 |
22.0-22.1 |
7.26 |
12.395 |
0.586 |
12.988 |
0.682 |
21 |
21.9-22.0 |
7.23 |
12.36 |
0.585 |
12.948 |
0.681 |
Electrical properties |
|
Voc:-0.3 %/ºC |
Intensity:1000 W/m² |
Isc: +0.06 %/ºC |
Spectrum:AM1.5G |
Production process
Cleaning & Texturing: Wafers are cleaned with industrial soaps and form square-based pyramids also called texture. The texturization helps to reduce the reflection of sunlight.
Diffusion: Wafers that have been pre-droped with boron during the casting process are then given a negative(n-type) surface characteristic by diffusing them with a phosphorus source at high temperature, which in turn creats the negative/positive(n-p) junction.
Etching: Phosphorus diffuses not only into the desired wafer surface but also into the side and the opposite surface to form PN. This gives a shunt path between the cell front and rear. Removal of the path around the wafer edge/edge junction isolation is named etching.
PECVD: By PECVD equipment, the wafers are coated with anti-reflection coating(ARC). It's the blue silicion nitride film to reduce reflection and promote absorption of light.
Printing & Heating: it was adopted by printing paste with screen technology to print the electrodes of silicion solar, and form a good ohmic contact.
Testing & Sorting: It means classifying the cells according to their efficiency tested under the simulated sunlight.
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